Citation
Sabah, Sinan and Sulaiman, Nasri
(2020)
A self-rectifying memristor model for simulation and ReRAM applications.
Indonesian Journal of Electrical Engineering and Computer Science, 19 (3).
1204 - 1209.
ISSN 2502-4752
Abstract
In this paper, a self-rectifying memristor (SRM) model is proposed for memristive circuit simulations. This model is based on the behavior of voltage controlled, bipolar memristors that exhibit diode-like rectification behavior when reverse biased. Such unique feature can solve the sneak path problem in crossbar memristive memory structures without requiring additional cell selectors. The results show that the proposed model satisfies the basic memristor’s i-v characteristics and fits many different memristor devices adequately. The proposed model is implemented in Verilog-A so that it is conveniently incorporated into various memristor applications with different circuit simulators
Download File
Official URL or Download Paper: https://ijeecs.iaescore.com/index.php/IJEECS/artic...
|
![[img]](http://psasir.upm.edu.my/style/images/fileicons/text.png)
Additional Metadata
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Engineering |
| DOI Number: | https://doi.org/10.11591/ijeecs.v19.i3 |
| Publisher: | Institute of Advanced Engineering and Science |
| Keywords: | Memristor model; ReRAM; Self-rectifying memristor; Sneak path current |
| Depositing User: | Ms. Nuraida Ibrahim |
| Date Deposited: | 06 Jul 2022 04:45 |
| Last Modified: | 06 Jul 2022 04:45 |
| Altmetrics: | http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.11591/ijeecs.v19.i3 |
| URI: | http://psasir.upm.edu.my/id/eprint/87682 |
| Statistic Details: | View Download Statistic |
Actions (login required)
 |
View Item |