Fluoropolymer as dielectric in organic field effect transistor (OFET)

Citation

Nor Halim, Nur Amiera and Mohtar, Mohd Nazim and Ramli, Muhammad Mahyiddin and Mohd Sidek, Roslina and Abd Wahab, Nur Zuraihan (2019) Fluoropolymer as dielectric in organic field effect transistor (OFET). In: 2019 4th IEEE International Circuit and System Symposium (ICSyS), 18-19 Sept. 2019, Hotel Istana, Kuala Lumpur, Malaysia. (pp. 1-5).

Abstract

Fluoropolymer is a type of dielectric material that have been used in fabricating Organic Thin Film Transistor (OTFT). Dielectric layer is one of the layers that make OTFT. It is the layer that sort the electric field that can be used. Fluoropolymer have unique characteristics that can be utilized for fabrication of OTFT. Fluoropolymer is low dielectric contact material which is needed in ultra-large-scale integration (ULSI) to breakdown the parasitic capacitance that affect the value of current flow. Drop cast technique has been used as depositing method on interdigitated electrode (IDE) on glass substrate. The length of the channel is varied to study the IV characteristic. Current- voltage (I-V) measurements have been used to measure the resistance at the different channel length. The value of resistivity can give some impact to the OFET device.

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Additional Metadata

Item Type:	Conference or Workshop Item (Paper)
Divisions:	Faculty of Engineering Institute of Advanced Technology
DOI Number:	https://doi.org/10.1109/ICSyS47076.2019.8982440
Publisher:	IEEE
Keywords:	Organic field effect transistor; Organic thin film transistor; Dielectric material; Fluoropolymer; Channel length; Resistance
Depositing User:	Nabilah Mustapa
Date Deposited:	03 Jun 2020 06:31
Last Modified:	03 Jun 2020 06:31
Altmetrics:	http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1109/ICSyS47076.2019.8982440
URI:	http://psasir.upm.edu.my/id/eprint/78090
Statistic Details:	View Download Statistic

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