Citation
Thahe, Asaad Aldulimi and Bakhtiar, Hazri and Bidin, Noriah and Hassan, Zainuriah and Qaeed, Motahher A. and Ramizy, Asmiet and Talib, Zainal Abidin and Ahmed, Naser Mahmoud and Omar, Khalid and Al-qaraghuli, Hasan and Husham, Mohammed and Allam, Nageh K.
(2018)
High-performance nanoporous silicon-based photodetectors.
Optik, 168 (2018).
424 - 431.
ISSN 0030-4026; ESSN: 1618-1336
Abstract
A series of porous silicon (PSi) samples was prepared using photoelectrochemical etching (PECE) method with optimum current density of 45 mA/cm2. The as-prepared PSi samples were characterized to determine the influence of the etching time (15, 25 and 30 min) on their morphology and electrical properties. The percentage of porosity was estimated via gravimetric analysis. The band gap of the fabricated PSi was ≈2.22 eV. Upon their use to fabricate metal-semiconductor-metal (MSM) ultraviolet photodetectors (UVPD), the fabricated PSi revealed excellent stability and reliability under repetitive shots at 530 nm. Furthermore, very fast rise time (≈0.28 s) was obtained at a bias of 1 V under visible light (530 nm) illumination.
Download File
|
Additional Metadata
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Science Institute of Advanced Technology |
| DOI Number: | https://doi.org/10.1016/j.ijleo.2018.04.084 |
| Publisher: | Elsevier |
| Keywords: | Porous silicon; Etching time; Electrical properties; Photodetector |
| Depositing User: | Mr. Sazali Mohamad |
| Date Deposited: | 05 Dec 2019 04:16 |
| Last Modified: | 05 Dec 2019 04:16 |
| Altmetrics: | http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=/10.1016/j.ijleo.2018.04.084 |
| URI: | http://psasir.upm.edu.my/id/eprint/74510 |
| Statistic Details: | View Download Statistic |
Actions (login required)
 |
View Item |