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Enhanced gain saturation model of non-linear semiconductor optical amplifiers


Citation

Kharraz, Osayd M. and M. Supa'at, Abu Sahmah and Atieh, Ahmed and Abdul Kadir @ Jaafar, Muhammad Zamzuri and Mahdi, Mohd Adzir (2018) Enhanced gain saturation model of non-linear semiconductor optical amplifiers. IET Optoelectronics, 12 (6). 263 - 268. ISSN 1751-8776

Abstract

This study proposes an enhanced gain saturation model of non-linear semiconductor optical amplifiers (SOAs) by incorporating material-dependent gain compression factor. The rate equations are utilised with the extra gain compression term for Indium-Gallium-Arsenide material-based SOA to account for the steep relaxation oscillations behaviour of non-linear SOAs. The proposed gain saturation model is verified with experimental results that showed very good agreements with a mean square error of 0.094.


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Additional Metadata

Item Type: Article
Divisions: Faculty of Engineering
DOI Number: https://doi.org/10.1049/iet-opt.2018.5029
Publisher: Institution of Engineering and Technology
Keywords: Gallium arsenide; III-V semiconductors; Indium compounds; Optical saturation; Semiconductor optical amplifiers
Depositing User: Nurul Ainie Mokhtar
Date Deposited: 03 Nov 2020 03:58
Last Modified: 03 Nov 2020 03:58
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1049/iet-opt.2018.5029
URI: http://psasir.upm.edu.my/id/eprint/72574
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