On the fabrication of aluminum doped silica preform using MCVD and solution doping technique

Citation

Aljamimi, Salah Mohammed and Mat Sharif, Khairul Anuar and Muhamad Yassin, Shahrin Zen and Zulkifli, Mohd Imran and Tamchek, Nizam and Yusoff, Zulfadzli and Abdul Rashid, Hairul Azhar (2012) On the fabrication of aluminum doped silica preform using MCVD and solution doping technique. In: 3rd International Conference on Photonics 2012 (ICP 2012), 1-3 Oct. 2012, Penang, Malaysia. (pp. 235-238).

Abstract

This paper provides detailed discussions on the fabrication of aluminum doped silica preform using solution doping technique and modified chemical vapor deposition (MCVD). The porous core layer was deposited at 1750°C with 30cm in deposition length. The soot formed at the inlet and outlet segment of the deposited length is analyzed using SEM for soot size and BET for pore size distribution. Refractive index profile of the doped preform is measured using preform analyzer. The refractive index difference obtained at the outlet and inlet segments shows uniform distribution of Al2O3, in agreement with the pore size distribution.

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Additional Metadata

Item Type:	Conference or Workshop Item (Paper)
Divisions:	Faculty of Science
DOI Number:	https://doi.org/10.1109/ICP.2012.6379518
Publisher:	IEEE
Keywords:	MCVD; Solution doping technique; Aluminum doped silica preform
Depositing User:	Nabilah Mustapa
Date Deposited:	04 Jul 2019 04:45
Last Modified:	04 Jul 2019 04:45
Altmetrics:	http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1109/ICP.2012.6379518
URI:	http://psasir.upm.edu.my/id/eprint/69505
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