Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process

Citation

Mat Sharif, Khairul Anuar and Zulkifli, Mohd Imran and Muhamad Yassin, Shahrin Zen and Tamchek, Nizam and Aljamimi, Salah Mohammed and Yusoff, A. and Mohd Amin, Yusoff and S. A., Siti Shafiqah and Abdul Rashid, Hairul Azhar (2013) Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process. In: 4th International Conference on Photonics (ICP2013), 28-30 Oct. 2013, Equatorial Hotel Melaka, Malaysia. (pp. 284-287).

Abstract

Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX. The experimental result is compared to theory such as thickness deposited layer and mole fraction of germanium in silica.

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Additional Metadata

Item Type:	Conference or Workshop Item (Paper)
Divisions:	Faculty of Science
DOI Number:	https://doi.org/10.1109/ICP.2013.6687140
Publisher:	IEEE
Keywords:	MCVD; Thermophoretic; Chloride oxidation; Silica preform; Germanium doped silica; EPMA
Depositing User:	Nabilah Mustapa
Date Deposited:	12 Jun 2019 07:36
Last Modified:	12 Jun 2019 07:36
Altmetrics:	http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1109/ICP.2013.6687140
URI:	http://psasir.upm.edu.my/id/eprint/69175
Statistic Details:	View Download Statistic

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