ZnO doping profile effect on CIGS solar cells efficiency and parasitic resistive losses based on cells equivalent circuit

Citation

Khoshsirat, Nima and Md Yunus, Nurul Amziah and Hamidon, Mohd Nizar and Shafie, Suhaidi and Amin, Nowshad (2013) ZnO doping profile effect on CIGS solar cells efficiency and parasitic resistive losses based on cells equivalent circuit. In: 2013 IEEE International Conference on Circuits and Systems (ICCAS 2013), 18-19 Sept. 2013, Kuala Lumpur, Malaysia. (pp. 86-91).

Abstract

The window layer of the CIGS thin film solar cells plays the role of transparent front contact and the n-side of pn-heterojunction. Thus the variation of window layers electrical and optical properties can affect the cell performance. Properties of Al-doped Zinc oxide (ZnO) thin film as most common used window layer for CIGS solar cells were studied via simulation using the simulation program called SCAPS-1D. This study is aimed to find the effect of ZnO layer doping profile on cell performance. It is found that increasing Al-content up to 5% in ZnO layer will lead to increasing the cell efficiency and will decrease the cell series and shunt resistance.

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Additional Metadata

Item Type:	Conference or Workshop Item (Paper)
Divisions:	Faculty of Engineering
DOI Number:	https://doi.org/10.1109/CircuitsAndSystems.2013.6671641
Publisher:	IEEE
Keywords:	CIGS; SCAPS-1D; Thin film solar cells; Window layer; Zinc oxide
Depositing User:	Nabilah Mustapa
Date Deposited:	10 May 2019 08:32
Last Modified:	10 May 2019 08:32
Altmetrics:	http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1109/CircuitsAndSystems.2013.6671641
URI:	http://psasir.upm.edu.my/id/eprint/68349
Statistic Details:	View Download Statistic

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