Citation
Dehzangi, Arash and Larki, Farhad and Saion, Elias and Hutagalung, Sabar D. and Hamidon, Mohd Nizar and Hassan, Jumiah
(2011)
Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography.
In: 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM 2011), 28-30 Sept. 2011, Le Meridien Hotel, Kota Kinabalu, Sabah. (pp. 104-107).
Abstract
The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM) nano lithography on Silicon on Insulator (SOI) wafer. I-V characteristic and the Drain/Source current under the lateral gate voltage investigated. The subthreshold swing measured and hysteresis effect observed for the old sample compared to new one.
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Additional Metadata
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculty of Engineering Faculty of Science |
| DOI Number: | https://doi.org/10.1109/RSM.2011.6088302 |
| Publisher: | IEEE |
| Keywords: | P-type silicon nanowire transistor; Atomic force microscopy nano lithography; Field effect; Silicon on insulator SOI; Local anodic oxidation |
| Depositing User: | Nabilah Mustapa |
| Date Deposited: | 09 May 2019 03:39 |
| Last Modified: | 09 May 2019 03:39 |
| Altmetrics: | http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1109/RSM.2011.6088302 |
| URI: | http://psasir.upm.edu.my/id/eprint/68199 |
| Statistic Details: | View Download Statistic |
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