Citation
Larki, Farhad and Dehzangi, Arash and Md. Ali, Sawal Hamid and Jalar @ Jalil, Azman and Islam, Md. Shabiul and Yeop Majlis, Burhanuddin and Saion, Elias and Hamidon, Mohd Nizar and Hutagalung, Sabar D.
(2014)
Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors.
In: 2014 IEEE International Conference on Semiconductor Electronics (ICSE 2014), 27-29 Aug. 2014, Berjaya Times Square Hotel, Kuala Lumpur, Malaysia. (pp. 170-173).
Abstract
The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (ION/IOFF) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation.
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Additional Metadata
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculty of Science Institute of Advanced Technology |
| DOI Number: | https://doi.org/10.1109/SMELEC.2014.6920823 |
| Publisher: | IEEE |
| Keywords: | Air gap; Junctionless transistor (JLT); Lateral gate (LG); TCAD simulation |
| Depositing User: | Nabilah Mustapa |
| Date Deposited: | 30 Jun 2017 09:54 |
| Last Modified: | 30 Jun 2017 09:54 |
| Altmetrics: | http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1109/SMELEC.2014.6920823 |
| URI: | http://psasir.upm.edu.my/id/eprint/55922 |
| Statistic Details: | View Download Statistic |
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