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Study of the side gate junctionless transistor in accumulation region


Citation

Dehzangi, Arash and Larki, Farhad and Md Ali, Sawal Hamid and Hutagalung, Sabar Derita and Islam, Md Shabiul and Hamidon, Mohd Nizar and Menon, Susthitha and Jalar @ Jalil, Azman and Hassan, Jumiah and Yeop Majlis, Burhanuddin (2016) Study of the side gate junctionless transistor in accumulation region. Microelectronics International, 33 (2). pp. 61-67. ISSN 1356-5362; ESSN: 1758-812X

Abstract

Mohd. Nizar Hamidon/ Jumiah Binti Hassan/ Arash Dehzangi/ Farhad Larki, Sawal Hamid Md Ali, Sabar Derita Hutagalung, Burhanuddin Yeop Majlis


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Additional Metadata

Item Type: Article
Subject: Semiconductor technology; Thick/thin film technology
Divisions: Faculty of Science
DOI Number: https://doi.org/10.1108/MI-03-2015-0027
Publisher: Emerald
Depositing User: Nurul Ainie Mokhtar
Date Deposited: 21 Feb 2018 06:28
Last Modified: 21 Feb 2018 06:28
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1108/MI-03-2015-0027
URI: http://psasir.upm.edu.my/id/eprint/53922
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