Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon

Citation

Al-Jumaili, Batool Eneaze Bandar and Talib, Zainal Abidin and L. Y., Josephine and Paiman, Suriati and M. Ahmed, Naser (2016) Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon. Journal of Solid State Science and Technology Letters, 17 (1). pp. 79-82. ISSN 0128-8393

Abstract

Metal-semiconductor-metal (MSM) photodetector was fabricated on a Porous silicon (PS) layer that was prepared using photo electrochemical etching (PEC). The surface morphology of the PS was carried out by field emission scanning electron microscopy. The I-V characteristics under dark and illuminated conditions and the responsivity of Pt-PS-Si heterostructures were investigated. The device exhibited that photogeneration in heterojunction happens in each of the regions of the porous Si film and Si substrate. The MSM photodetector exhibited sensitivity of 3.22×102 as well as inner gain of 4.22 when exposed to tungsten lamp at 5 V. The photodetector also shows good repeatability when illuminated with 460 nm (7 W/cm2) chopped light and the saturation current increased as the voltage increase.

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Additional Metadata

Item Type:	Article
Divisions:	Faculty of Science
Publisher:	The Malaysian Solid State Science and Technology Society
Keywords:	Porous silicon; Electrochemical etching; Photodetector sensitivity
Depositing User:	Ms. Ainur Aqidah Hamzah
Date Deposited:	18 Mar 2022 05:58
Last Modified:	18 Mar 2022 05:58
URI:	http://psasir.upm.edu.my/id/eprint/53564
Statistic Details:	View Download Statistic

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