Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes

Citation

Muhammad Noor, Ahmad Shukri and Zainal Abidin, Mohd Shahnan and Kawata, Yoshimasa (2010) Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes. In: 1st International Conference on Photonics 2010 (ICP 2010), 5-7 July 2010, Langkawi, Kedah. .

Abstract

Two-photon excitation techniques used in fabricating lines defects were done on a light emitting diode chip. Simultaneous detection of a quenched wide-gap semiconductor crystal has been observed using single- and two-photon photoluminescence. It was found at the quenched area, single-photon excitation gives photoluminescence read-out compared to two-photon excitation which no photoluminescence detected at the bandgap wavelength. This is due to the excitation states which the transition of electron for two-photon excitation to occur have been demolished by the annealing of the sample which involved two-photon quenching process. The dependency of excitation power with respective photoluminescence is elaborated to confirmed the single- and two-photon excitation photoluminescence methods.

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Additional Metadata

Item Type:	Conference or Workshop Item (Paper)
Divisions:	Faculty of Engineering
DOI Number:	https://doi.org/10.1109/ICP.2010.5604436
Publisher:	IEEE
Keywords:	Photoluminescence; Quenching; Single-photon; Two-photon
Depositing User:	Nabilah Mustapa
Date Deposited:	15 Jul 2016 08:43
Last Modified:	15 Jul 2016 08:43
Altmetrics:	http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1109/ICP.2010.5604436
URI:	http://psasir.upm.edu.my/id/eprint/47791
Statistic Details:	View Download Statistic

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