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Magnetoresistance effect of Cu/Cu-Co hybrid multilayer films


Citation

Shaari, Abdul Halim and Lim, Kean Pah and A., Huda and Lee, Oon Jew and Saion, Elias and Talib, Zainal Abidin and Abbas, Zulkifly and Cik, Abdulah (2004) Magnetoresistance effect of Cu/Cu-Co hybrid multilayer films. In: IEEE International Conference on Semiconductor Electronics (ICSE 2004), 7-9 Dec. 2004, Kuala Lumpur, Malaysia. (pp. 494-496).

Abstract

A series of hybrid multilayers of CuCo/Cu had been fabricated using RF magnetron sputtering technique. Investigation on film's surface morphology, structural and magnetoresistance properties had been carried out using atomic force microscope (AFM), X-ray diffraction (XRD) and four-point probe method. AFM image show that Cu layer consist of uniform size of particles size distribution. However, the CuCo show broad particles size distribution. XRD spectrum shows that both Cu and CuCo layers is Cu(111), Cu(200) and Cu(220) oriented with the formation of Cu(111) structure is dominant. The GMR ratio for all sample are small. The highest GMR value of -0.6% is obtained for sample with 5 layers. It is believed to be due to the formation of superparamagnetic particles in the sample that needed higher magnetic field to saturate it. The results also show that number of layer did not influence much to improve the GMR value.


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Additional Metadata

Item Type: Conference or Workshop Item (Paper)
Divisions: Faculty of Science
DOI Number: https://doi.org/10.1109/SMELEC.2004.1620934
Publisher: IEEE
Keywords: Cu/Cu-Co; Magnetoresistance; GMR; Multilayer films
Depositing User: Nabilah Mustapa
Date Deposited: 14 Jul 2016 04:32
Last Modified: 14 Jul 2016 04:32
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1109/SMELEC.2004.1620934
URI: http://psasir.upm.edu.my/id/eprint/47680
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