Growth of InP nanowires on silicon using a thin buffer layer

Citation

Fonseka, H. Aruni and Tan, Hark Hoe and Kang, Jung Hyun and Paiman, Suriati and Gao, Qian and Parkinson, Patrick and Jagadish, Chennupati (2012) Growth of InP nanowires on silicon using a thin buffer layer. In: 2012 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), 12-14 Dec. 2012, Melbourne, Victoria, Australia. (pp. 43-44).

Abstract

InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.

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Additional Metadata

Item Type:	Conference or Workshop Item (Paper)
Divisions:	Faculty of Science
DOI Number:	https://doi.org/10.1109/COMMAD.2012.6472351
Publisher:	IEEE
Keywords:	InP nanowires (NWs); Silicon; Thin inter-mediate buffer layer; III-V materials; Monolithic integration of photonics
Depositing User:	Azian Edawati Zakaria
Date Deposited:	13 Jul 2015 02:05
Last Modified:	15 Jan 2018 09:43
Altmetrics:	http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1109/COMMAD.2012.6472351
URI:	http://psasir.upm.edu.my/id/eprint/39268
Statistic Details:	View Download Statistic

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