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Fabrication and simulation of single crystal p-type Si nanowire using SOI technology


Dehzangi, Arash and Larki, Farhad and Naseri, Mahmud Godarz and Navasery, Manizheh and Yeop Majlis, Burhanuddin and Mohd Razip Wee, Mohd Farhanulhakim and Mohamed Kamari, Halimah and Islam, Md. Shabiul and Md. Ali, Sawal Hamid and Saion, Elias (2015) Fabrication and simulation of single crystal p-type Si nanowire using SOI technology. Applied Surface Science, 334. pp. 87-93. ISSN 0169-4332; ESSN: 1873-5584


Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63°C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

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Additional Metadata

Item Type: Article
Divisions: Faculty of Science
DOI Number: https://doi.org/10.1016/j.apsusc.2014.08.074
Publisher: Elsevier
Keywords: Single crystal silicon nanowire; Atomic force microscope nanolithography; Silicon on insulator; KOH wet etching
Depositing User: Nabilah Mustapa
Date Deposited: 15 Dec 2015 03:16
Last Modified: 15 Dec 2015 03:16
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1016/j.apsusc.2014.08.074
URI: http://psasir.upm.edu.my/id/eprint/37600
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