Citation
Dehzangi, Arash and Larki, Farhad and Majlis, Burhanuddin Yeop and Naseri, Mahmood Goodarz and Navasery, Manizheh and Abdullah, A. Makarimi and Hutagalung, Sabar D. and Abdul Hamid, Norihan and Mohd Noor, Mimiwaty and Vakilian, Mohammadmahdi and Saion, Elias
(2013)
Impact of KOH etching on nanostructure fabricated by local
anodic oxidation method.
International Journal of Electrochemical Science, 8 (6).
pp. 8084-8096.
ISSN 1452-3981
Abstract
In this letter, we investigate the impact of potassium hydroxide (KOH) etching procedure on Silicon
nanostructure fabricated by Atomic force microscopy on P-type Silicon-on-insulator. An
electrochemical process, as the local anodic oxidation followed by two wet chemical etching steps,
KOH etching for silicon removal and hydrofluoric etching for oxide removal, were implemented to
fabricate the silicon nanostructures. The effect of the pure KOH concentrations (10% to 30% wt) on
the quality of the surface is studied. The influence of etching immersing time in etching of
nanostructure and SOI surface are considered as well. Impact of different KOH concentrations mixed
with 10% IPA with reaction temperature on etch rate is investigated. The KOH etching process is
elaborately optimized by 30%wt. KOH + 10%vol. IPA in appropriate time and temperature. The angle
of the walls in etch pit for extracted nanowire reveals some deviation from the standard anisotropic
etching.
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Additional Metadata
| Item Type: |
Article
|
| Divisions: |
Faculty of Science |
| Publisher: |
Electrochemical Science Group |
| Keywords: |
Local anodic oxidation (LAO); Silicon-on-insulator (SOI); Potassium hydroxide (KOH) wet chemical etching; Isopropyl alcohol (IPA). |
| Depositing User: |
Umikalthom Abdullah
|
| Date Deposited: |
14 Nov 2014 06:21 |
| Last Modified: |
07 Oct 2015 08:45 |
| URI: |
http://psasir.upm.edu.my/id/eprint/30415 |
| Statistic Details: |
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