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Structural, morphology and electrical properties of layered copper selenide thin film


Citation

Ying, Josephine Chyi Liew and Talib, Zainal Abidin and Mat Yunus, Wan Mahmood and Zainal, Zulkarnain and Shaari, Abdul Halim and Abd. Moksin, Mohd Maarof and Wan Yusoff, Wan Mohd Daud and Lim, Kean Pah (2009) Structural, morphology and electrical properties of layered copper selenide thin film. Central European Journal of Physics, 7 (2). pp. 379-384. ISSN 1895-1082

Abstract

Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.


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Additional Metadata

Item Type: Article
Divisions: Faculty of Science
DOI Number: https://doi.org/10.2478/s11534-009-0057-1
Publisher: Versita Warsaw and Springer
Keywords: CuSe thin films, electrical conductivity; Surface roughness; Film thickness; Grain size
Depositing User: Najwani Amir Sariffudin
Date Deposited: 21 Jan 2013 08:41
Last Modified: 26 Sep 2016 02:34
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.2478/s11534-009-0057-1
URI: http://psasir.upm.edu.my/id/eprint/16870
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