Citation
Jaafar, Haslina and Sidek, Othman and Miskam, Muhamad Azman and Abdul Rahman, Muhammad Razi
(2010)
High-isolation and low-loss RF MEMS shunt switches.
Applied Computational Electromagnetics Society Journal, 25 (9).
pp. 780-786.
ISSN 1054-4887
Abstract
This paper presents the design and simulation of a radio frequency (RF) microelectromechanical system (MEMS) shunt switch using a three-dimensional RF simulator, Em3ds10 (2008 version) software for the frequency range of 1-40 GHz. The shunt capacitive switch is electrostatic actuated and designed with a meander beam support to lower the pull-in voltage. Fast simulations of complex structures based on a method-of-moment approach allow for optimal design of MEMS switch. The switch has a simulated pull-in voltage of 2.5 V and the RF performances of insertion loss and isolation are less than -0.2 dB and -50 dB at 12 GHz, respectively.
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Official URL or Download Paper: http://www.aces-society.org/search.php?vol=25&no=9...
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Additional Metadata
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Engineering |
| Publisher: | Applied Computational Electromagnetics Society |
| Keywords: | Insertion loss; Isolation; Low voltage; MEMS; Method-of-moment; RF MEMS; Shunt switch |
| Depositing User: | Nabilah Mustapa |
| Date Deposited: | 08 May 2019 07:49 |
| Last Modified: | 08 May 2019 07:49 |
| URI: | http://psasir.upm.edu.my/id/eprint/15009 |
| Statistic Details: | View Download Statistic |
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