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High-isolation and low-loss RF MEMS shunt switches


Citation

Jaafar, Haslina and Sidek, Othman and Miskam, Muhamad Azman and Abdul Rahman, Muhammad Razi (2010) High-isolation and low-loss RF MEMS shunt switches. Applied Computational Electromagnetics Society Journal, 25 (9). pp. 780-786. ISSN 1054-4887

Abstract

This paper presents the design and simulation of a radio frequency (RF) microelectromechanical system (MEMS) shunt switch using a three-dimensional RF simulator, Em3ds10 (2008 version) software for the frequency range of 1-40 GHz. The shunt capacitive switch is electrostatic actuated and designed with a meander beam support to lower the pull-in voltage. Fast simulations of complex structures based on a method-of-moment approach allow for optimal design of MEMS switch. The switch has a simulated pull-in voltage of 2.5 V and the RF performances of insertion loss and isolation are less than -0.2 dB and -50 dB at 12 GHz, respectively.


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Additional Metadata

Item Type: Article
Divisions: Faculty of Engineering
Publisher: Applied Computational Electromagnetics Society
Keywords: Insertion loss; Isolation; Low voltage; MEMS; Method-of-moment; RF MEMS; Shunt switch
Depositing User: Nabilah Mustapa
Date Deposited: 08 May 2019 07:49
Last Modified: 08 May 2019 07:49
URI: http://psasir.upm.edu.my/id/eprint/15009
Statistic Details: View Download Statistic

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