Effects of deposition potential on Cu4SnS4 thin films prepared by electrodeposition technique.

Citation

Kassim, Anuar and Abdullah, Dzulkefly Kuang and Mohd Sharif, Atan and Haron, Md. Jelas and Tan, Wee Tee and Ho, Soon Min and Nagalingam, Saravanan (2010) Effects of deposition potential on Cu4SnS4 thin films prepared by electrodeposition technique. The Arabian Journal for Science and Engineering, 35 (1A). pp. 83-92. ISSN 1319-8025; ESSN: 2191-4281

Abstract

Cu4SnS4 thin films were produced by the electrodeposition technique on indium tin oxide substrates at room temperature. The effects of deposition potential toward the properties of the thin films were investigated. The structural, morphological, and optical properties of thin films have been investigated by using x-ray diffraction, atomic force microscopy, and UV-vis spectrophotometer, respectively. The nanocrystalline film was found to be orthorhombic in structure, with the preferential orientation along the 221 plane. The AFM image reveals the electrodeposited films were smooth, compact, and uniform at deposition potential of –0.6 V. The optical band gap of films ranges from 1.58 to 1.84 eV depending upon the deposition potential. The photoresponse in the cathodic region indicated a p-type semiconductor.

Download File

Preview

PDF (Abstract)
Effects of deposition potential on Cu4SnS4 thin films prepared by electrodeposition technique.pdf
Download (180kB) | Preview

Additional Metadata

Item Type:	Article
Divisions:	Faculty of Science
Publisher:	Springer Publishing
Keywords:	Electrodeposition; Thin films; Semiconducting material; Optical properties
Depositing User:	Najwani Amir Sariffudin
Date Deposited:	14 May 2014 02:35
Last Modified:	30 Jun 2016 02:49
URI:	http://psasir.upm.edu.my/id/eprint/14361
Statistic Details:	View Download Statistic

Actions (login required)

View Item