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Effect of deposition period and pH on chemical bath deposited Cu4SnS4 thin films


Citation

Kassim, Anuar and Nagalingam, Saravanan and Tan, Wee Tee and Mohd Sharif, Atan and Abdullah, Dzulkefly Kuang and Haron, Md. Jelas and Ho, Soon Min (2009) Effect of deposition period and pH on chemical bath deposited Cu4SnS4 thin films. Philippine Journal of Science, 138 (2). pp. 161-168. ISSN 0031-7683

Abstract

Cu4SnS4 thin films were prepared through chemical bath deposition technique. The effect of deposition period and pH was studied to determine the optimum condition for deposition process. The structure and morphology of thin films were investigated by X-ray diffraction and atomic force microscopy, respectively. The optical properties were measured to determine transition type and band gap value. The thin films produced were found to be polycrystalline with orthorhombic structure. X-ray diffraction data showed that the most intense peak at 2θ = 30.2° which belongs to (221) plane. As the deposition period was increased up to 80 min, the film gradually grew thicker as shown by the AFM images. It is observed that the best crystallinity of film is obtained at pH 1.5. Also, AFM images revealed that the grains were distributed evenly over the substrate surface. The bandgap value was found to be 1.9 eV with direct transition.


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Additional Metadata

Item Type: Article
Divisions: Faculty of Science
Publisher: Science and Technology Information Institute
Keywords: Metal chalcogenides; Optical properties; Semiconductor; X-ray diffraction
Depositing User: Nurul Ainie Mokhtar
Date Deposited: 19 Jun 2015 02:22
Last Modified: 28 Sep 2015 00:42
URI: http://psasir.upm.edu.my/id/eprint/14222
Statistic Details: View Download Statistic

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