Determination of the relative influences of carbon doping and disorder on field and temperature dependent critical current density of MgB2

Citation

Chen, Soo Kien and Xu, Xun and Kim, Jung Ho and Dou, Shi Xue and MacManus-Driscoll, Judith Louise (2009) Determination of the relative influences of carbon doping and disorder on field and temperature dependent critical current density of MgB2. Superconductor Science and Technology, 22 (12). pp. 1-5. ISSN 0953-2048; ESSN: 1361-6668

Abstract

SiC was mixed with Mg and B and reacted by either a one-step in situ or two-step method at 650 or 850 °C. By doing so, it was possible to determine the extent to which scattering via C doping influences the magnitude of field dependent critical current density, Jc(H), compared to pinning via generation of microstructural disorder. The one-step reaction method leads to Mg2Si formation and at the same time to more C doping of MgB2 than the two-step method. Carbon increases both the irreversibility field, Hirr, and upper critical field, Hc2 (T<28 K). However, for the temperatures (6 and 20 K) and fields (up to 7 T) studied, pinning rather than scattering overwhelmingly dominates the magnitude of the field dependent critical current density.

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Additional Metadata

Item Type:	Article
Divisions:	Faculty of Science
DOI Number:	https://doi.org/10.1088/0953-2048/22/12/125005
Publisher:	Institute of Physics Publishing
Keywords:	Carbon doping; Microstructural disorder; MgB2
Depositing User:	Nurul Ainie Mokhtar
Date Deposited:	18 Jun 2015 03:43
Last Modified:	03 Nov 2015 07:39
Altmetrics:	http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1088/0953-2048/22/12/125005
URI:	http://psasir.upm.edu.my/id/eprint/13965
Statistic Details:	View Download Statistic

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