Research on strain-responsive Arsenene/SnSeS heterojunction for digital media technology: a first-principles calculations

The rapid advancement of artificial intelligence and big data has led to a significant increase in global demand for data storage and information transmission, raising concerns regarding capacity and efficiency. Consequently, the development of novel stimulus-responsive materials has emerged as a critical area of research. This study presents the construction of a new Arsenene/SnSeS heterojunction and employs first-principles methods to manipulate its electronic and optical properties through the application of strain. The computational findings reveal that the Arsenene/SnSeS heterojunction demonstrates remarkable stability and favorable electronic characteristics. Notably, the bandgap of the heterojunction is smaller than that of both the Arsenene monolayer and the SnSeS monolayer, thereby facilitating enhanced charge transfer. Furthermore, the electronic properties of the Arsenene/SnSeS heterojunction can be effectively modulated by strain, which induces redshift or blueshift in the optical absorption peaks. These research outcomes offer valuable insights for the advancement of intelligent stimulus-responsive materials.

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