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Spiking neural network circuit with op-amp based LIF neuron and RRAM synaptic array


Citation

M.V., Eashwar and T., Nivetha and B., Bindu and Kamsani, Noor Ain (2025) Spiking neural network circuit with op-amp based LIF neuron and RRAM synaptic array. AEU - International Journal of Electronics and Communications, 201 (undefined). art. no. 156004. undefined-undefined. ISSN 1434-8411; eISSN: 1618-0399

Abstract

Spiking Neural Networks (SNNs) have become crucial in neuromorphic computing for efficiently processing the vast amounts of digital data generated in the technology-driven world. The resistive RAM (RRAM) based SNNs offer superior energy efficiency, high-speed processing, parallelism, and scalability for neuromorphic computing applications. In this article, an SNN circuit with a 1T-1R RRAM synaptic array along with op-amp and 555 timer-based leaky integrate-and-fire (LIF) neuron is implemented to use for pattern recognition. The input pre-spikes from the pattern are applied to the RRAM synaptic array, which exhibits synaptic plasticity. The LIF neuron processes the synaptic array output to produce post-spikes, which modify the conductance of the RRAM synaptic array based on the spike-timing-dependent plasticity (STDP) mechanism. The unique output spikes obtained for different characters can be used for pattern recognition of the characters.


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Additional Metadata

Item Type: Article
Divisions: Faculty of Engineering
DOI Number: https://doi.org/10.1016/j.aeue.2025.156004
Publisher: Elsevier GmbH
Keywords: LIF neuron; Pattern recognition; RRAM synapses; SNN; STDP mechanism
Depositing User: Ms. Che Wa Zakaria
Date Deposited: 30 Oct 2025 06:32
Last Modified: 30 Oct 2025 06:32
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1016/j.aeue.2025.156004
URI: http://psasir.upm.edu.my/id/eprint/120579
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