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Transfer free graphene growth on SiO2 substrate at 250 °C


Vishwakarma, Riteshkumar and Rosmi, Mohamad Saufi and Takahashi, Kazunari and Wakamatsu, Yuji and Yaakob, Yazid and Araby, Mona Ibrahim and Kalita, Golap and Kitazawa, Masashi and Tanemura, Masaki (2017) Transfer free graphene growth on SiO2 substrate at 250 °C. Scientific Reports, 7. art. no. 43756. pp. 1-8. ISSN 2045-2322


Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.

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Official URL or Download Paper: https://www.nature.com/articles/srep43756

Additional Metadata

Item Type: Article
Divisions: Faculty of Science
DOI Number: https://doi.org/10.1038/srep43756
Publisher: Nature Publishing Group
Keywords: Graphene; Chemical vapour deposition; SiO2
Depositing User: Mohd Hafiz Che Mahasan
Date Deposited: 07 Nov 2018 03:31
Last Modified: 07 Nov 2018 03:31
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1038/srep43756
URI: http://psasir.upm.edu.my/id/eprint/63600
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