Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source

Citation

Sabli, Nordin and Talib, Zainal Abidin and Mat Yunus, Wan Mahmood and Zainal, Zulkarnain and Hilal, Hikmat S. and Fujii, Masatoshi (2013) Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source. In: 4th International Meeting on Frontiers in Physics (IMFP 2013), 27-30 Aug. 2013, Kuala Lumpur, Malaysia. (pp. 261-264).

Abstract

This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 cm3/min). Higher value of photoresponse was observed for films deposited under VA = 25 cm3/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.

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Additional Metadata

Item Type:	Conference or Workshop Item (Paper)
Divisions:	Faculty of Science
DOI Number:	https://doi.org/10.1063/1.4866957
Publisher:	AIP Publishing LLC
Keywords:	Doping; Photoresponse; Thermal vacuum evaporation; Thin film; Tin selenide
Depositing User:	Nabilah Mustapa
Date Deposited:	27 Sep 2017 07:28
Last Modified:	27 Sep 2017 07:28
Altmetrics:	http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1063/1.4866957
URI:	http://psasir.upm.edu.my/id/eprint/57389
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