Citation
Paiman, Suriati and Sakrani, Samsudi and Ismail, Bakar and Talib, Zainal Abidin
(2003)
Ellipsometric study of Si1-x Gex alloy.
Solid State Science and Technology, 11 (1).
pp. 89-94.
ISSN 0128-7389
Abstract
A report on ellipsometric studies of Si0.5 Ge0.5 and Si0.7 Ge0.3 thin films is described. The samples were earlier prepared from SiGe disks of 3” diameter using RF magnetron sputtering and the films were deposited onto glass substrates at room temperature. Some of the optical properties were investigated using an ellipsometer. In this method, we investigate the changes in refractive indices, n and extinction coefficients, k with film thickness as well as the relevant dielectric constant, ε. The results showed that, at a wavelength of 632.80 nm, n was found to increase with an increase of the germanium contents.
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Additional Metadata
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Science and Environmental Studies |
| Publisher: | Malaysian Solid State Science and Technology Society |
| Keywords: | Si1-x Gex; Refractive index; Ellipsometer |
| Depositing User: | Nabilah Mustapa |
| Date Deposited: | 12 Apr 2016 02:24 |
| Last Modified: | 12 Apr 2016 02:24 |
| URI: | http://psasir.upm.edu.my/id/eprint/42200 |
| Statistic Details: | View Download Statistic |
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