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Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation


Citation

Tan, Gim Heng and Mohd Sidek, Roslina and Ramiah, Harikrishnan and Chong, Wei Keat and Lioe, De Xing (2014) Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation. The Scientific World Journal, 2014. art. no. 163414. pp. 1-5. ISSN 2356-6140; ESSN: 1537-744X

Abstract

This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2.


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Additional Metadata

Item Type: Article
Divisions: Faculty of Engineering
DOI Number: https://doi.org/10.1155/2014/163414
Publisher: Hindawi Publishing Corporation
Keywords: Ultra-low-voltage; CMOS-based current bleeding mixer; High LO-RF isolation
Depositing User: Nurul Ainie Mokhtar
Date Deposited: 11 Feb 2016 05:11
Last Modified: 11 Feb 2016 05:11
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1155/2014/163414
URI: http://psasir.upm.edu.my/id/eprint/35910
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