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Effects of growth rate on InP nanowires morphology and crystal structure


Citation

Paiman, Suriati and Gao, Qiang and Tan, H. H. and Jagadish, C. and Zhang, X. and Zou, J. (2013) Effects of growth rate on InP nanowires morphology and crystal structure. Journal of Crystal Growth, 383. pp. 100-105. ISSN 0022-0248

Abstract

We report the effects of growth rate on the crystal structure of InP nanowires grown on InP (111)B substrate by metal organic chemical vapour deposition (MOCVD) using gold nanoparticles as catalysts. Results showed that slower growth rate helps to reduce planar defects and the crystal structure changes from wurtzite to zinc-blende with increasing both group III and V precursors flows. Nonetheless, the tapering effect can be reduced with growth rate. High resolution transmission electron microscopy (HR-TEM) confirmed that the crystal structure changes with growth rate.


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Additional Metadata

Item Type: Article
Divisions: Faculty of Science
Institute of Advanced Technology
DOI Number: https://doi.org/10.1016/j.jcrysgro.2013.08.014
Publisher: Elsevier
Keywords: Crystal structure; Growth rate; MOCVD; Semiconducting indium phosphide.
Depositing User: Umikalthom Abdullah
Date Deposited: 10 Sep 2014 02:37
Last Modified: 28 Oct 2015 03:09
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1016/j.jcrysgro.2013.08.014
URI: http://psasir.upm.edu.my/id/eprint/30175
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