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Electrical transport and magnetic properties of MgB2 reacted with Si and C


Chen, Soo Kien and Tan, Kwee Yong and Shaari, Abdul Halim and Xu, Xun and De Silva, S. and Yeoh, Wai Kong and Dou, Shi Xue and Kursumovic, Ahmed and MacManus-Driscoll, Judith L. (2013) Electrical transport and magnetic properties of MgB2 reacted with Si and C. In: International Conference on Magnet Technology, 14-19 July 2013, Boston, USA. . (Unpublished)


SiC is among the promising dopants which can be used to increase the critical current density of MgB2 superconductor up to the level required for producing high magnetic field. In this work, we are motivated to study how Si and C influence the electromagnetic properties of bulk MgB2 prepared by reacting the material with SiC or combination of Si and C elements (Si+C). While there is no significant change in the e-axis lattice parameter, the a-axis is smaller compared with that of the pure sample indicating substitution of C on the B site. The C substitution level was estimated based on the relative change of c with respect to a (c1a). By varying the sintering temperature, the C substitution level is different between the samples reacted with SiC and {Si+C) despite their superconducting transition temperature is close to each other. The upper critical fields were determined from the temperature and magnetic field dependence of resistive transition. These results together with the inductive critical current density were correlated to the resistivity properties and C substitution.

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Additional Metadata

Item Type: Conference or Workshop Item (Paper)
Divisions: Faculty of Science
Notes: Full text are available at Special Collection Division Office.
Keywords: Electrical properties; Magnetic properties; Superconductor
Depositing User: Erni Suraya Abdul Aziz
Date Deposited: 05 Feb 2014 03:35
Last Modified: 30 Nov 2016 04:12
URI: http://psasir.upm.edu.my/id/eprint/27204
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