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Study the characteristic of p-type junction-less side gate silicon nanowire transistor fabricated by atomic force microscopy lithography


Dehzangi, Arash and Larki, Farhad and Saion, Elias and Hatagalung, Sabar D. and Abdullah, Ahmad Makarimi and Hamidon, Mohd Nizar and Hassan, Jumiah (2011) Study the characteristic of p-type junction-less side gate silicon nanowire transistor fabricated by atomic force microscopy lithography. American Journal of Applied Sciences, 8 (9). pp. 872-877. ISSN 1546-9239; ESSN: 1554-3641


Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronic in order to less energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors. Approach: The Junction-less side gate silicon Nano-wire transistor has been fabricated by Atomic Force Microscopy (AFM) and wet etching on p-type Silicon On Insulator (SOI) wafer. Then, we checked the characteristic and conductance trend in this device regarding to semi-classical approach by Semiconductor Probe Analyser (SPA). Results: We observe in characteristic of the device directly proportionality of the negative gate voltage and Source-Drain current. In semi classical approach, negative Gate voltage falling down the energy States of the Nano-wire between the source and the drain. The graph for positive gate voltage plotted as well to check. In other hand, the conductance will be following characteristic due to varying the gate voltage under the different drain-source voltage. Conclusion: The channel energy states are supposed to locate between two electrochemical potentials of the contacts in order to transform the charge. For the p-type channel the transform of the carriers is located in valence band and changing the positive or negative gate voltage, make the valence band energy states out of or in the area between the electrochemical potentials of the contacts causing the current reduced or increased.

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Additional Metadata

Item Type: Article
Divisions: Faculty of Science
Faculty of Engineering
DOI Number: https://doi.org/10.3844/ajassp.2011.872.877
Publisher: Science Publications
Keywords: Silicon nanowire transistor (SNWT); Density of state (DoS); Electrochemical potential
Depositing User: Nur Farahin Ramli
Date Deposited: 01 Aug 2013 07:49
Last Modified: 23 Nov 2017 09:51
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.3844/ajassp.2011.872.877
URI: http://psasir.upm.edu.my/id/eprint/25031
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