Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals.

Citation

Mohd Noor, Ahmad Shukri and Miyakawa, Atsuo and Kawata, Yoshimasa and Torizawa, Makoto (2008) Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals. Applied Physics Letters, 92 (16). ISSN 0003-6951; ESSN: 1077-3118

Abstract

The use of photoluminescence excited with two-photon process for characterizing the defect and impurity level in wide-gap semiconductor is discussed in this paper. Defects of polycrystalline zinc selenide (ZnSe) is observed deep inside the crystal. Two types of defects can be detected based on the spectral luminescence image. One type of defect can be seen in the entire spectrum images. Meanwhile, other types of defects can only be observed at higher energy of the spectrum, from 460 to 465 nm. This study represents works of identifying crystals defect in wide gap materials by two-photon luminescence technique.

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Additional Metadata

Item Type:	Article
Divisions:	Faculty of Engineering
DOI Number:	https://doi.org/10.1063/1.2913760
Publisher:	American Institute of Physics Inc.
Keywords:	Crystal defects; Photoluminescence; Photons; Polycrystalline materials; Semiconducting zinc compounds; Semiconductor materials.
Depositing User:	Fatimah Zahrah @ Aishah Amran
Date Deposited:	30 Dec 2013 05:32
Last Modified:	26 Oct 2015 01:15
Altmetrics:	http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1063/1.2913760
URI:	http://psasir.upm.edu.my/id/eprint/17504
Statistic Details:	View Download Statistic

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