Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films

Citation

Teo, Sook Liang and Zainal, Zulkarnain and Tan, Wee Tee and Hussein, Mohd. Zobir (2010) Pulse electrodeposition and solid phase voltammetry of copper indium disulfide semiconductor thin films. Solid State Science and Technology, 18 (2). pp. 74-83. ISSN 0128-7389

Abstract

CuInS2 thin films were deposited onto fluorine doped tin oxide coated glass (FTO) using pulse electrodeposition from aqueous solutions comprising Cu-EDTA, In2(SO4)3 and Na2S2O3. Deposited films were polycrystalline with tetragonal structure and behavior as a p-type semiconductor. A smooth and adherent film was obtained at pulse height of -1.00 V and the band gap energy was found to be 1.40 eV with indirect transition. The Cu:In:S compositions of the films was 1.1:1.0:1.8. From morphological studies, the particles had worm like structure which interconnected with each other. Solid phase voltammetry resulted in redox couple of Cu2+/Cu+ and Cu+/Cu0.

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Additional Metadata

Item Type:	Article
Divisions:	Faculty of Science
Publisher:	Malaysian Solid State Science and Technology Society
Keywords:	Pulse electrodeposition;, Solid phase voltammetry; Copper indium disulfide
Depositing User:	Nurul Ainie Mokhtar
Date Deposited:	02 Aug 2015 09:02
Last Modified:	19 Jan 2016 02:48
URI:	http://psasir.upm.edu.my/id/eprint/16389
Statistic Details:	View Download Statistic

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