UPM Institutional Repository

Potentiostatic deposition of copper indium disulfide thin films: effect of cathodic potential on optical and photoelectrochemical properties


Citation

Teo, Sook Liang and Zainal, Zulkarnain and Tan, Wee Tee and Imad, Hamadneh (2008) Potentiostatic deposition of copper indium disulfide thin films: effect of cathodic potential on optical and photoelectrochemical properties. The Malaysian Journal of Analytical Sciences, 12 (3). pp. 600-608. ISSN 1394-2506

Abstract

CuInS2 thin films were one-step potentiostatically deposited onto indium tin oxide (ITO) coated glass from aqueous solution containing CuCl2, InCl3 and Na2S2O3. The effect of cathodic potentials on the structural, photoelectrochemical and optical properties of the deposited film were studied. X-ray diffraction (XRD) patterns showed that the deposited CuInS2 material was polycrystalline with tetragonal structure. Photoactivity of the samples was studied using linear sweep voltammetry. A typical increase from 1.25 to 2.30 eV in the optical band gap energy was observed on increasing the cathodic potential from -0.30 to -0.70 V (Ag/AgCl).


Download File

[img]
Preview
PDF (Abstract)
Potentiostatic deposition of copper indium disulfide thin films.pdf

Download (83kB) | Preview

Additional Metadata

Item Type: Article
Subject: Thin films
Subject: Energy bands
Divisions: Faculty of Science
Publisher: Malaysian Society of Analytical Sciences
Keywords: CuInS2; Potentiostatic deposition; Cathodic potential; Photoactivity; Band gap
Depositing User: Najwani Amir Sariffudin
Date Deposited: 23 Mar 2013 01:17
Last Modified: 20 Jan 2016 07:15
URI: http://psasir.upm.edu.my/id/eprint/16269
Statistic Details: View Download Statistic

Actions (login required)

View Item View Item