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Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots


Citation

Fernández-Delgado, Natalia and Collado, Miriam Herrera and Chisholm, Matthew F. and Ahmad Kamarudin, Mazliana and Zhuang, Qian Dong and Hayne, Manus and Molina, Sergio I. (2017) Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. Applied Surface Science, 395. pp. 136-139. ISSN 0169-4332; ESSN: 1873-5584

Abstract

In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3 Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.


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Additional Metadata

Item Type: Article
Divisions: Faculty of Science
DOI Number: https://doi.org/10.1016/j.apsusc.2016.04.131
Publisher: Elsevier
Keywords: GaSb; Quantum dot; Scanning transmission electron microscopy; Thermal annealing
Depositing User: Nabilah Mustapa
Date Deposited: 09 May 2019 01:25
Last Modified: 09 May 2019 01:25
Altmetrics: http://www.altmetric.com/details.php?domain=psasir.upm.edu.my&doi=10.1016/j.apsusc.2016.04.131
URI: http://psasir.upm.edu.my/id/eprint/15114
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