UPM Institutional Repository

Design, simulation and modeling of high Q RF MEMS inductor


Rahimi, Maryam and Jamuar, Sudhanshu Shekhar and Hamidon, Mohd Nizar and Ahmad, Mohd Rais and Mousavi, Sayed Alireza and Bayat, Mehdi (2008) Design, simulation and modeling of high Q RF MEMS inductor. International Review of Electrical Engineering, 3 (6). pp. 1048-1053. ISSN 1827-6660


Silicon integrated circuit spiral inductors and transformers are finding wide ranging applications in RF circuits. This paper presents implementation and characterization of spiral inductor using MEMS technology on silicon substrate for use in design of voltage controlled oscillator (VCO). MEMS inductors have been realized from the CMOS-compatible MEMS process. Suspended inductor has been employed in design to avoid substrate coupling. The dimensions of the inductor have been obtained using the Greenhouse formula. The inductors have been simulated using CoventorWare software. The Yue's model has been applied to compute lumped equivalent parameters and Q factor of the inductors. The resultant value of inductance and Q factor are 2.87nH and 27 respectively at 2.4 GHz, which are in good agreement with the results of Greenhouse formula.

Download File

PDF (Abstract)

Download (83kB) | Preview

Additional Metadata

Item Type: Article
Divisions: Faculty of Engineering
Publisher: Praise Worthy Prize
Keywords: CMOS compatible inductor; Inductor model; Microelectromechanical systems (MEMS); Quality factor; Spiral inductor
Depositing User: Nabilah Mustapa
Date Deposited: 12 May 2015 00:14
Last Modified: 30 Oct 2015 01:40
URI: http://psasir.upm.edu.my/id/eprint/13919
Statistic Details: View Download Statistic

Actions (login required)

View Item View Item