Fabrication and characterization of MnxZn(1-x)Oδ (x = 0.02, 0.04, 0.06, 0.08 & 0.10) as a buffer layer for CZTS thin film solar cells

The buffer layer in solar cells plays a critical role in the performance of the device by optimizing charge transport, minimizing recombination losses and improving overall cell stability. Manganese zinc oxide (MnxZn(1-x)Oδ) serves as a promising buffer layer in copper zinc tin sulfide (CZTS) solar cells to improve the efficiency for better device performance. This study explores the fabrication and characterizations of MnxZn(1-x)Oδ thin films and the potential as a buffer layer in CZTS solar cells. The compositions of manganese (Mn) and zinc oxide (ZnO) in MnxZn(1-x)Oδ nanocomposite were varied by controlling x value equals to 0.02, 0.04, 0.06, 0.08 and 0.1. Manganese zinc oxide solution was deposited onto CZTS by using spin-coating technique. The thin films were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and ultraviolet–visible spectroscopy (UV–Vis) to study the structure, morphology, elemental and optical properties of the films. To investigate the electrochemical properties and the solar cell efficiency, electrochemical impedance spectroscopy (EIS) analysis and current density–voltage (J-V) measurement were conducted. As the result, MnxZn(1-x)Oδ with x = 0.04 shows the highest power conversion efficiency (1.525%) with Jsc, Voc and FF of 0.282 A/m2, 0.649 V and 0.833. The findings show that MnxZn(1-x)Oδ able to address key limitations in CZTS solar cells, paving the way for scalable and environmentally sustainable thin film photovoltaic technologies.

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