A review on resistive RAM: from material properties to switching characteristics, reliability, models and applications

The resistive random access memory (RRAM) is a promising non-volatile memory technology for in-memory computing and neuromorphic applications, due to its fast switching, better scalability and reliability features. This paper provides a comprehensive review of RRAM including the impact of electrode and oxide material properties on switching mechanisms. The key performance metrics like switching voltages, resistance ON/OFF ratio, and reliability factors such as retention, endurance, and uniformity are analyzed. The various techniques to enhance the switching characteristics, such as selection of electrodes, insulators, doping of oxide, fabrication methods, and the insertion of additional layers are discussed. The electrodes with low electronegativity, low Gibbs free energy, and a large work function difference between the top and bottom electrodes have better switching performance in RRAM devices. The switching performance can be further enhanced using optimal doping percentage and thickness of insulators. The optimised RRAM devices have fast switching speed ranging from to, excellent scalability down to sub-, high endurance between to cycles and long data retention time of to seconds. The paper is summarized with an overview of RRAM models and recent developments in RRAM applications.

Text 123214.pdf - Published Version Restricted to Repository staff only Download (3MB) Official URL or Download Paper: https://link.springer.com/article/10.1007/s42341-0...

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