UPM Institutional Repository

Reactive ion etching of 4H-SiC using SF6/O2 for MEMS application


Citation

Hezarjaribi, Yadollah and Hamidon, Mohd Nizar (2013) Reactive ion etching of 4H-SiC using SF6/O2 for MEMS application. The International Journal of Engineering and Science, 2 (2). pp. 87-92. ISSN 2319–1805; ESSN: 2319–1813

Abstract

Deep Reactive Ion Etching (DRIE) of 4H-SiC performed using SF6/O2 plasma. The etching rates investigated as a function of the ratio of the O2 flow rate to total gas flow rate under different etching conditions such as the effect of power density, temperature, and the combination of chemistries on etching. The investigation was proven that the contribution and effect of the direct role of Oxygen to deep etching of SiC. An optimum value of O2 fraction of 60% to 40% Sulfur Hexafluoride (SF6) used to give high etching rate of 1.2μm/min. for maximum etching.


Download File

[img]
Preview
PDF (Abstract)
Reactive ion etching of 4H.pdf

Download (180kB) | Preview
Official URL or Download Paper: http://www.theijes.com/Vol,2,Issue,2.html

Additional Metadata

Item Type: Article
Divisions: Faculty of Engineering
Keywords: Deep Reactive Ion Etching (DRIE); Sulfur hexafluoride (SF6); 4H-SiC; Plasma
Depositing User: Nabilah Mustapa
Date Deposited: 25 Jul 2015 01:29
Last Modified: 11 Sep 2015 03:05
URI: http://psasir.upm.edu.my/id/eprint/28742
Statistic Details: View Download Statistic

Actions (login required)

View Item View Item