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Preparation Of Tin Selenide Thin Film Semiconductor By Electrochemical Deposition And Electroselenisation

Ali, Ali Jimale (2000) Preparation Of Tin Selenide Thin Film Semiconductor By Electrochemical Deposition And Electroselenisation. Masters thesis, Universiti Putra Malaysia.

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Abstract

Electrochemical preparation of tin selenide thin film semiconductor for photoelectrochemical cells (PECs) was studied. The film has been potentiostatically deposited on tin substrate at room temperature from aqueous solution containing SnCl2 and Na2SeO3. The effect of the electrodeposition potentials and bath electrolytes concentrations proportion were investigated to determine the optimum condition for electrodeposition. The structure, morphology and the photosensitivity of the electrosynthesised samples were studied by using X-ray diffiaction, scanning electron microscopy (SEM) and linear sweep voltammetry techniques. The bandgap energy and type of optical transition were determined from optical absorbance data. The X-ray diffraction analysis confirmed the formation of polycrystalline SnSe on the tin substrate. Scanning electron microscopy reaffirmed the existence of a crystalline deposit with different grain size and shape. The films prepared in this study showed a p-type semiconductor behaviour with very good photosensitivity.

Item Type:Thesis (Masters)
Subject:Electrochemical analysis
Subject:Photoelectrochemistry
Chairman Supervisor:Associate Professor Zulkarnain Zainal, PhD
Call Number:FSAS 2000 10
Faculty or Institute:Faculty of Environmental Studies
ID Code:11412
Deposited By: Mohd Nezeri Mohamad
Deposited On:15 Jul 2011 02:52
Last Modified:11 May 2012 03:43

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